View IRLML2502GPBF_5006761.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 96163
IRLML2502GPBF
l l l l l l l l
Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free
HEXFET(R) Power MOSFET
* ' 6
VDSS = 20V RDS(on) = 0.045
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Micro3TM
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 4.2 3.4 33 1.25 0.8 0.01 12 -55 to + 150
Units
V A W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
C/W
www.irf.com
1
07/22/08
IRLML2502GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 20 --- --- --- 0.60 5.8 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.01 0.035 0.050 --- --- --- --- --- --- 8.0 1.8 1.7 7.5 10 54 26 740 90 66
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 4.5V, ID = 4.2A 0.080 VGS = 2.5V, ID = 3.6A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.0A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 12 ID = 4.0A 2.7 nC VDS = 10V 2.6 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- RG = 6 --- RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 16 8.6 1.3 A 33 1.2 24 13 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.3A, VGS = 0V TJ = 25C, IF = 1.3A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t 5sec.
2
www.irf.com
IRLML2502GPBF
100
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
100
I D , Drain-to-Source Current (A)
2.25V
10
I D , Drain-to-Source Current (A)
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
10
2.25V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.0A
I D , Drain-to-Source Current (A)
1.5
TJ = 25 C
1.0
TJ = 150 C
0.5
10 2.0
V DS = 15V 20s PULSE WIDTH 2.4 2.8 3.2 3.6 4.0
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRLML2502GPBF
1200
1000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = 4.0A VDS = 10V
8
C, Capacitance (pF)
800
Ciss
6
600
4
400
200
2
0
Coss Crss
1 10 100
0
0
4
8
12
16
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150 C
I D , Drain Current (A)
100
10us 10 100us 1ms 1 10ms
1
TJ = 25 C
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4
0.1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRLML2502GPBF
4.0
ID , Drain Current (A)
3.0
2.0
1.0
0.0
25
50
TC , Case Temperature ( C)
75
100
125
150
Fig 9. Maximum Drain Current Vs. Case Temperature
1000
Thermal Response (Z thJA )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRLML2502GPBF
RDS ( on ) , Drain-to-Source On Resistance ( )
0.05
0.30
RDS(on) , Drain-to -Source Voltage ( )
VGS = 2.5V 0.20
0.04
Id = 4.0A
0.03
0.10 VGS = 4.5V
0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
0.00 0 10 20 30 40 iD , Drain Current ( A )
VGS, Gate -to -Source Voltage ( V )
Fig 11. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
6
www.irf.com
IRLML2502GPBF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
6 D A 5
DIMENSIONS
SYMBOL MILLIMETERS MIN MAX INCHES MIN MAX
3 6 E1 1 2
E
0.15 [0.006] M C B A
5
B
e e1
A A2 C H 4
L1
c
0.10 [0.004] C
L2 3X L 7
A1
3X b
0.20 [0.008] M C B A
A A1 A2 b c D E E1 e e1 L L1 L2
0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0
1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8
"$
0.0004
"$ ! " '" #& "& &$ % !
0
## # # ! ' ! # $$ 7T8 7T8A !#
REF BSC 8
Recommended Footprint
0.972
0.950
NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.802
2.742
1.900
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
XA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S
Y = YEAR W = WEEK
PART NUMBER
A YW LC
HALOGEN FREE INDICATOR LOT CODE
@6S ! !! !" !# !$ !% !& !' !( !
! " # $ % & ' (
XPSF X@@F ! " #
X 6 7 8 9
PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 Note: A line above the work week (as shown here) indicates Lead-free
!# !$ !% XPSF X@@F !& !' !( "
Y a
XA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S @6S ! !! !" !# !$ !% !& !' !( ! 6 7 8 9 @ A B C E F X 6 7 8 9
$ $ $!
Y a
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
www.irf.com
7
IRLML2502GPBF
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 )
1.85 ( .072 ) 1.65 ( .065 )
1.32 ( .051 ) 1.12 ( .045 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2008
8
www.irf.com

▲Up To Search▲

Price & Availability of IRLML2502GPBF

	To Download IRLML2502GPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .